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1

Mechanical and Optical Properties Characterization of C-Plane (0001) and M-Plane (10−10) GaN by Nanoindentation and Luminescence

Yokogawa, Toshiya, Fujikane, Masaki, Nagao, Shijo, Nowak, Roman

Journal:

MRS Proceedings

Year:

2015

Language:

english

File:

PDF, 20.20 MB

english, 2015

2

Ultraviolet biexcitonic emission from AlGaN ternary alloys

Toshiya Yokogawa, Yoichi Yamada

Journal:

Electronics and Communications in Japan

Year:

2011

Language:

english

File:

PDF, 382 KB

english, 2011

3

Luminescence properties of iodine doped cubic ZnS crystals and the effect of ion implantation of N, P and Ag

Tsunemasa Taguchi, Toshiya Yokogawa, Shigeo Fujita, Mamoru Satoh, Yoshio Inuishi

Journal:

Journal of Crystal Growth

Year:

1982

Language:

english

File:

PDF, 435 KB

english, 1982

4

Low-loss MOVPE-grown ZnSeZnS superlattice optical waveguide

Toshiya Yokogawa, Toshihiro Fujita, Mototsugu Ogura, Takao Kajiwara

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 471 KB

english, 1988

5

Effect of strain on ZnSe/AlGaInP heterostructures grown by MOVPE

Yokogawa, Toshiya, Saitoh, Tohru, Hoshina, Jun-ichi, Narusawa, Tadashi

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 280 KB

english, 1990

6

Effects of electric field on ZnSe/ZnS strained-layer superlattices

Toshiya Yokogawa, Tohru Saitoh, Tadashi Narusawa

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 350 KB

english, 1990

7

ZnSe/ZnS strained layer superlattices grown on CaF2 substrates by MOVPE

Toshiya Yokogawa, Tadashi Narusawa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 313 KB

english, 1991

8

ZnTe/ZnSTe doping superlattices grown on InP substrates by metalorganic vapor phase epitaxy

Toshiya Yokogawa, Tadashi Narusawa

Journal:

Journal of Crystal Growth

Year:

1992

Language:

english

File:

PDF, 304 KB

english, 1992

9

Raman and photoluminescence investigations of ZnSe-ZnS strained-layer superlattices

Le Hong Shon, Koichi Inoue, Osamu Matsuda, Kazuo Murase, Toshiya Yokogawa, Mototsugu Ogura

Journal:

Solid State Communications

Year:

1988

Language:

english

File:

PDF, 287 KB

english, 1988

10

Nonlinear optical properties and blue-light-emitting diode of ZnSe/ZnS and ZnTe/ZnS strained-layer superlattices

Toshiya Yokogawa

Journal:

Physica B: Condensed Matter

Year:

1993

Language:

english

File:

PDF, 953 KB

english, 1993

11

Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth

Akihiko Ishibashi, Yasutoshi Kawaguchi, Gaku Sugahara, Toshitaka Shimamoto, Toshiya Yokogawa, Yoichi Yamada, Yusuke Ueki, Kohzo Nakamura, Tsunemasa Taguchi

Journal:

physica status solidi (b)

Year:

2004

Language:

english

File:

PDF, 176 KB

english, 2004

12

Microarea strain analysis in GaN-based laser diodes using high-resolution microbeam X-ray diffraction

Toshiya Yokogawa, Ryo Kato, Shigeru Kimura, Osami Sakata

Journal:

physica status solidi (b)

Year:

2010

Language:

english

File:

PDF, 287 KB

english, 2010

13

Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growth

Yasutoshi Kawaguchi, Gaku Sugahara, Atsunori Mochida, Toshitaka Shimamoto, Akihiko Ishibashi, Toshiya Yokogawa

Journal:

physica status solidi (c)

Year:

2003

Language:

english

File:

PDF, 175 KB

english, 2003

14

Discrete luminescence bands in AlGaN-based quantum wells

Hideaki Murotani, Yoichi Yamada, Tsunemasa Taguchi, Akihiko Ishibashi, Yasutoshi Kawaguchi, Toshiya Yokogawa

Journal:

physica status solidi (c)

Year:

2009

Language:

english

File:

PDF, 287 KB

english, 2009

15

Exciton localization in Al-rich AlGaN ternary alloy epitaxial layers

Hideaki Murotani, Yoichi Yamada, Tsunemasa Taguchi, Ryo Kato, Toshiya Yokogawa

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 103 KB

english, 2010

16

Mechanical properties characterization of c -plane (0001) and m -plane (10–10) GaN by nanoindentation examination

Masaki Fujikane, Akira Inoue, Toshiya Yokogawa, Shijo Nagao, Roman Nowak

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 399 KB

english, 2010

17

Yield shear stress dependence on nanoindentation strain rate in bulk GaN crystal

Masaki Fujikane, Toshiya Yokogawa, Shijo Nagao, Roman Nowak

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 161 KB

english, 2011

18

Nanoindentation study on insight of plasticity related to dislocation density and crystal orientation in GaN

Fujikane, Masaki, Yokogawa, Toshiya, Nagao, Shijo, Nowak, Roman

Journal:

Applied Physics Letters

Year:

2012

Language:

english

File:

PDF, 2.08 MB

english, 2012

19

Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers

Murotani, Hideaki, Yamada, Yoichi, Taguchi, Tsunemasa, Ishibashi, Akihiko, Kawaguchi, Yasutoshi, Yokogawa, Toshiya

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 455 KB

english, 2008

20

Low Contact Resistance P-Type Electrode for Nonpolar m -Plane GaN

Oya, Mitsuaki, Yokogawa, Toshiya

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 941 KB

english, 2013

21

epitaxial layers

Yamada, Yoichi, Ueki, Yusuke, Nakamura, Kohzo, Taguchi, Tsunemasa, Ishibashi, Akihiko, Kawaguchi, Yasutoshi, Yokogawa, Toshiya

Journal:

Physical Review B

Year:

2004

Language:

english

File:

PDF, 70 KB

english, 2004

22

Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal

Fujikane, Masaki, Yokogawa, Toshiya, Nagao, Shijo, Nowak, Roman

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 768 KB

english, 2013

23

Theoretical considerations on efficiency degradation due to thermal effect in a planar GaN-based LED with a GaN substrate

Sato-Iwanaga, Junko, Liu, Yang, Dutton, Robert W., Tsuchiya, Hideaki, Yokogawa, Toshiya

Journal:

Japanese Journal of Applied Physics

Year:

2014

Language:

english

File:

PDF, 1.29 MB

english, 2014

24

Single-Crystalline Epitaxial ZnS Waveguides for Phase Matched Second Harmonic Generation Devices

Saitoh, Tohru, Yokogawa, Toshiya, Narusawa, Tadashi

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 857 KB

1991

25

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Extremely high current density over 1000 A/cm2 operation in m-plane GaN small size LEDs with low efficiency droop and method for controlling radiation pattern and polarization

Inoue, Akira, Kato, Ryo, Yamada, Atsushi, Yokogawa, Toshiya

Year:

2012

Language:

english

File:

PDF, 457 KB

english, 2012

26

Low-loss short-wavelength optical waveguides using ZnSe-ZnS strained-layer superlattices

Yokogawa, Toshiya, Ogura, Mototsugu, Kajiwara, Takao

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 564 KB

english, 1988

27

Dependence of elastic strain on thickness for ZnSe films grown on lattice-mismatched materials

Yokogawa, Toshiya, Sato, Hisanao, Ogura, Mototsugu

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 554 KB

english, 1988

28

Optically pumped CdZnSe/ZnSe blue-green vertical cavity surface emitting lasers

Floyd, P. D., Merz, J. L., Luo, H., Furdyna, J. K., Yokogawa, Toshiya, Yamada, Yoichi

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 339 KB

english, 1995

29

ZnSe/ZnS heteroepitaxial growth using an intermediate strained-layer superlattice buffer

Yokogawa, Toshiya, Ogura, Mototsugu, Kajiwara, Takao

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 638 KB

english, 1987

30

Evidence of lattice tilt and slip in m-plane InGaN/GaN heterostructure

Yoshida, Shunji, Yokogawa, Toshiya, Imai, Yasuhiko, Kimura, Shigeru, Sakata, Osami

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1012 KB

english, 2011

31

Disordering of ZnSe/ZnS strained-layer superlattices by Si ion implantation

Saitoh, Tohru, Yokogawa, Toshiya, Narusawa, Tadashi

Journal:

Applied Physics Letters

Year:

1989

Language:

english

File:

PDF, 504 KB

english, 1989

32

Population dynamics of localized biexcitons in Al[sub x]Ga[sub 1−x]N ternary alloys

Yamada, Yoichi, Murotani, Hideaki, Taguchi, Tsunemasa, Ishibashi, Akihiko, Kawaguchi, Yasutoshi, Yokogawa, Toshiya

Journal:

Applied Physics Letters

Year:

2007

Language:

english

File:

PDF, 349 KB

english, 2007

33

Nitrogen delta doping in 6H silicon carbide layers

Yokogawa, Toshiya, Takahashi, Kunimasa, Uenoyama, Takeshi, Kusumoto, Osamu, Uchida, Masao, Kitabatake, Makoto

Journal:

Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 348 KB

english, 2001

34

ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkyls

Yokogawa, Toshiya, Ogura, Mototsugu, Kajiwara, Takao

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 371 KB

english, 1986

35

Growth of ZnSe/ZnS strained-layer superlattices on Si substrates

Yokogawa, Toshiya, Sato, Hisanao, Ogura, Mototsugu

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 817 KB

english, 1988

36

Electroluminescence in p-n junction using p-ZnTe/ZnS doping superlattices

Yokogawa, Toshiya, Narusawa, Tadashi

Journal:

Applied Physics Letters

Year:

1992

Language:

english

File:

PDF, 466 KB

english, 1992

37

Reactive ion beam etching of ZnSe and ZnS epitaxial films using Cl2 electron cyclotron resonance plasma

Saitoh, Tohru, Yokogawa, Toshiya, Narusawa, Tadashi

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 479 KB

english, 1990

38

Biexciton luminescence from Al[sub x]Ga[sub 1−x]N epitaxial layers

Yamada, Yoichi, Ueki, Yusuke, Nakamura, Kohzo, Taguchi, Tsunemasa, Kawaguchi, Yasutoshi, Ishibashi, Akihiko, Yokogawa, Toshiya

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 250 KB

english, 2004

39

Optical characterization of ZnSe/ZnS strained-layer superlattices grown on CaF2 substrates

Yokogawa, Toshiya, Saitoh, Tohru, Narusawa, Tadashi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 544 KB

english, 1991

40

Anisotropic effect of piezoelectric polarization on Schottky barrier height in elastically deformed bulk GaN crystal

Fujikane, Masaki, Yokogawa, Toshiya, Nagao, Shijo, Nowak, Roman

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 935 KB

english, 2011

41

Study on Deformations and Stress Distributions in Air-Bridged Lateral-Epitaxial-Grown GaN Films

Ishibashi, Akihiko, Sugahara, Gaku, Kawaguchi, Yasutoshi, Yokogawa, Toshiya

Journal:

Japanese Journal of Applied Physics

Year:

2003

Language:

english

File:

PDF, 269 KB

english, 2003

42

Microarea Strain Analysis in InGaN/GaN Multiple Quantum Wells on m -Plane Using High-Resolution Microbeam X-ray Diffraction

Yoshida, Shunji, Yokogawa, Toshiya, Imai, Yasuhiko, Kimura, Shigeru

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.13 MB

english, 2013

43

Spatial Inhomogeneity of Aluminum Content in Air-Bridged Lateral Epitaxially Grown AlGaN Ternary Alloy Films Probed by Cross-Sectional Scanning Near-Field Optical Microscopy

Ishibashi, Akihiko, Murotani, Hideaki, Yokogawa, Toshiya, Yamada, Yoichi

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.12 MB

english, 2012

44

SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)

Kusumoto, Osamu, Yokogawa, Toshiya, Yamashita, Kenya, Takahashi, Kunimasa, Kitabatake, Makoto, Uchida, Masao, Miyanaga, Ryouko

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 318 KB

2002

45

Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVD

Takahashi, Kunimasa, Uchida, Masao, Yokogawa, Toshiya, Kusumoto, Osamu, Yamashita, Kenya, Miyanaga, Ryouko, Kitabatake, Makoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 352 KB

2002

46

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII - Extremely high current density over 1000 A/cm 2 operation in M-GaN LEDs on bulk GaN substrates with low-efficiency droop

Streubel, Klaus P., Jeon, Heonsu, Tu, Li-Wei, Strassburg, Martin, Yokogawa, Toshiya, Inoue, Akira

Year:

2014

Language:

english

File:

PDF, 400 KB

english, 2014

47

Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers

Yokogawa, Toshiya, Yoshii, Shigeo, Tsujimura, Ayumu, Sasai, Yoichi, Merz, James

Journal:

Japanese Journal of Applied Physics

Year:

1995

File:

PDF, 373 KB

1995

48

Delta-Doped Layers of SiC Grown by 'Pulse Doping' Technique

Takahashi, Kunimasa, Yokogawa, Toshiya, Uchida, Masao, Kusumoto, Osamu, Yamashita, Kenya, Miyanaga, Ryouko, Kitabatake, Makoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 299 KB

2002

49

4H-SiC Delta-Doped Accumulation-Channel MOS FET

Yokogawa, Toshiya, Takahashi, Kunimasa, Kusumoto, Osamu, Uchida, Masao, Yamashita, Kenya, Kitabatake, Makoto

Journal:

Materials Science Forum

Year:

2002

File:

PDF, 330 KB

2002

50

A High Power InGaN-LED on an m-Plane GaN Substrate

YOKOGAWA, TOSHIYA, OYA, MITSUAKI, FUJIKANE, MASAKI

Journal:

Electronics and Communications in Japan

Year:

2015

Language:

english

File:

PDF, 1.29 MB

english, 2015

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